Tania Paskova
Electrical and Computer Engineering
- Phone: 919.513.3124
- Email: tmpaskov@ncsu.edu
- Office: Engineering Building II (EB2) 2092
Tania Paskova is a distinguished scientist with over 25 years of combined experience in academia, industry, and government agencies in a multi-cultural environment.
Her expertise spans from semiconductor physics, material synthesis, and advanced characterization of wide bandgap materials for electronic and photonic applications with a particular focus on nitrides.
She is editor and co-editor of two scientific books, author of 15 invited book chapters and reviews, and more than 260 scientific papers in peer-review journals and conference proceedings. She has a strong record as a principal investigator on several projects granted by MDA, DARPA, AFRL, ARO, and NSF. She is serving as Editor for the Journal of Crystal Growth and a member of several referee boards.
Paskova has recently completed a four-year tenure as a Program Director for the Electronic and Photonic Materials (EPM) Program with the Division of Materials Research (DMR) at the National Science Foundation (NSF) and is currently serving as a Program Manager for Electronic Sensing (ES) program in Army Research Office (ARO).
Research Interests
Paskova’s current research interests include advanced crystal growth concepts, fundamental optical properties, surface modifications for sensing applications, and thermal transport in wide bandgap materials for high power applications.
Education
| Degree | Program | School | Year |
|---|---|---|---|
| Ph.D. | Doctor of Philosophy in Physics | Sofia University | 1992 |
| MSP | Mater of Science in Physics | Sofia University | 1984 |
Honors and Awards
- 2016 | Program Director, National Science Foundation
Discover more about Tania Paskova
- Faculty-2-Faculty Mentor Awards
- New Technique Makes LEDs Brighter, More Resilient
- Dr. Tania Paskova and Dr. John Muth Receive Award For Research by the National Science Foundation
Publications
- On the thermal conductivity anisotropy in wurtzite GaN
- Tran, D. Q., Paskova, T., Darakchieva, V., & Paskov, P. P. (2023), AIP ADVANCES, 13(9). https://doi.org/10.1063/5.0167866
- Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)]
- Tran, D. Q., Delgado-Carrascon, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2021, May 3), APPLIED PHYSICS LETTERS, Vol. 118. https://doi.org/10.1063/5.0054625
- Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy
- Blumenschein, N., Kadlec, C., Romanyuk, O., Paskova, T., Muth, J. F., & Kadlec, F. (2020), JOURNAL OF APPLIED PHYSICS, 127(16). https://doi.org/10.1063/1.5143735
- Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness
- Tran, D. Q., Delgado-Carrasco, R., Muth, J. F., Paskova, T., Nawaz, M., Darakchieva, V., & Paskov, P. P. (2020), APPLIED PHYSICS LETTERS, 117(25). https://doi.org/10.1063/5.0031404
- Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors
- Blumenschein, N., Paskova, T., & Muth, J. F. (2019), PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216(20). https://doi.org/10.1002/pssa.201900098
- Modification of the Surface Properties of AlxGa1-xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments
- Gleco, S., Romanyuk, O., Gordeev, I., Kuldova, K., Paskova, T., & Ivanisevic, A. (2019), ACS OMEGA, 4(7), 11760–11769. https://doi.org/10.1021/acsomega.9b01467
- Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes
- Adams, W. T., Vinueza, N. R., Romanyuk, O., Gordeev, I., Paskova, T., & Ivanisevic, A. (2019), AIP ADVANCES, 9(2). https://doi.org/10.1063/1.5080353
- Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography
- Blumenschein, N. A., Moser, N. A., Heller, E. R., Miller, N. C., Green, A. J., Popp, A., … Jessen, G. H. (2020), IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(1), 204–211. https://doi.org/10.1109/TED.2019.2951502
- Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3
- Tran, D. Q., Blumenschein, N., Mock, A., Sukkaew, P., Zhang, H., Muth, J. F., … Darakchieva, V. (2020, February 15), PHYSICA B-CONDENSED MATTER, Vol. 579. https://doi.org/10.1016/j.physb.2019.411810
- Passivation of semipolar (10-1-1) GaN with different organic adsorbates
- Snyder, P. J., Davis, H., Berg, N. G., Pearce, B., Romanyuk, O., Jiricek, P., … Ivanisevic, A. (2019), MATERIALS LETTERS, 236, 201–204. https://doi.org/10.1016/j.matlet.2018.10.109
Grants
- Development of Ga2O3 Based Structures for High Power Applications
- IRES: U.S.-Czech Research Experience for Students on Wide Bandgap Materials for Energy and Biosensing Applications (IRES: Wide Bandgap Materials for Energy and Biosensing Applications)
- NSF IPA: Program Director for the Electronic and Photonic Materials Program, Division of Materials Research, Directorate for Mathematical and Physical Sciences at the National Science Foundation.
- Characterization of High Quality AlGaN Epitaxial Films Grown by HVPE
