Ramon Collazo

Materials Science Engineering

Phone: 919.515.8965
Email: rcollaz@ncsu.edu
Office: Research Building I 219
Website: https://www.mse.ncsu.edu/collazo

Ramón Collazo is an associate professor and has been involved in the growth and characterization of wide bandgap semiconductor thin films, especially nitrides and diamonds, for the past 11 years. He has been particularly involved in developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunction and their application to the first lateral p/n junction. Additionally, he has been involved in developing AlN bulk single crystal substrates, their surface preparation and further epitaxial thin film deposition for optoelectronics and power device applications. He has authored over 60 publications and given presentations at national and international conferences.

Research Interests

Collazo’s research interests include optoelectronic/power materials and devices, III-N wide bandgap semiconductors, polar materials like nitrides and oxides and optics like materials characterization and nonlinear.

Education

Degree	Program	School	Year
Ph.D.	Doctorate of Philosophy in Materials Science and Engineering	North Carolina State University	2002
BSP	Bachelor of Science in Physics	University of Puerto Rico	1995

Honors and Awards

2022 | University Faculty Scholar, NC State University
Facundo Bueso Medal for Physics, University of Puerto Rico

Discover more about Ramon Collazo

Prof Ramón Collazo Selected for NC State’s University Faculty Scholars Program

Publications

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation: Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024), JOURNAL OF APPLIED PHYSICS, 135(2). https://doi.org/10.1063/5.0179623
High-current, high-voltage AlN Schottky barrier diodes: Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1), https://doi.org/10.35848/1882-0786/ad81c9
(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation: Goorsky, M. S., Liao, M. E., Huynh, K., Wang, Y., Tweedie, J., Sitar, Z., … Huang, X. (2023), ECS Meeting Abstracts. https://doi.org/10.1149/MA2023-02351691mtgabs
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing: Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12), IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592
Anderson transition in compositionally graded p-AlGaN: Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023), JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics: Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
Demonstration of near-ideal Schottky contacts to Si-doped AlN: Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524
High conductivity and low activation energy in p-type AlGaN: Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023), Applied Physics Letters, 122(9). https://doi.org/10.1063/5.0141863
High conductivity in Ge-doped AlN achieved by a non-equilibrium process: Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
High p-conductivity in AlGaN enabled by polarization field engineering: Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427

View all publications via NC State Libraries

Grants

Center for Ultra-wide Bandgap Extreme-RF Electronics
Advanced Doping Techniques for AlGaN-based Power Devices
Career: Engineering Point Defect Formation In Uwbg-based Optoelectronic Devices
Ultra-High Gain Solar-Blind APD Arrays Based on AlGaN
Relaxed, Low Dislocation AlGaN Layers Grown on Native Substrates
Techniques For Selective Doping Of GaN For Power Devices Applications
Biotronics Using Individual Microorganism Cells and Wide Bandgap Semiconductors
Highly Efficient UV LEDs for Disinfection
Scanning Probe and Florescence Microscope for Biotronic Interfaces Based on Individual Cells and Wide Bandgap Semiconductors
Relaxed Low Dislocation AlGaN Layers Grown on AlN and GaN